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Abb.: Danny Kojda

Novel Materials

Humboldt-Universität zu Berlin - Mathematisch-Naturwissen­schaft­liche Fakultät - Novel Materials

Special Issue "Emerging Semiconducting Oxides" in pss-a

http://onlinelibrary.wiley.com/doi/10.1002/pssa.v211.1/issuetoc
physica status solidi (a)
Volume 211, Issue 1, pages 19–20, January 2014
DOI: 10.1002/pssa.201470207

 

Contents

Topical Section: Emerging Semiconducting Oxides
Guest Editors: Oliver Bierwagen and Saskia F. Fischer

INVITED ARTICLE
Page
21–26
Masataka Higashiwaki, Kohei Sasaki, Akito Kuramata, Takekazu Masui, and Shigenobu Yamakoshi
Development of gallium oxide power devices

ORIGINAL PAPERS
Page
27–33
Guenter Wagner, Michele Baldini, Daniela Gogova, Martin Schmidbauer, Robert Schewski,
Martin Albrecht, Zbigniew Galazka, Detlef Klimm, and Roberto Fornari
Homoepitaxial growth of-Ga2O3 layers by metal-organic vapor phase epitaxy

Page
34–39
Stefan Müller, Holger von Wenckstern, Daniel Splith, Florian Schmidt, and Marius Grundmann
Control of the conductivity of Si-doped -Ga2O3 thin films via growth temperature and pressure

Page
40–47
Daniel Splith, Stefan Müller, Florian Schmidt, Holger von Wenckstern, Johan Janse van Rensburg,
Walter E. Meyer, and Marius Grundmann
Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on
heteroepitaxial-Ga2O3thin films grown by pulsed laser deposition

Page
48–53
Oliver Bierwagen and James S. Speck
Plasma-assisted molecular beam epitaxy of Sn-doped In2O3: Sn incorporation, structural changes, doping limits, and compensation

Page
54–58
K. Irmscher, M. Naumann, M. Pietsch, Z. Galazka, R. Uecker, T. Schulz, R. Schewski,
M. Albrecht, and R. Fornari
On the nature and temperature dependence of the fundamental band gap of In2O3

Page
59–65
Dorothee Braun, Valentina Scherer, Christoph Janowitz, Zbigniew Galazka, Roberto Fornari
and Recardo Manzke In-gap states of In2O3 single crystals investigated by scanning tunneling
spectroscopy

Page
66–73
Zbigniew Galazka, Reinhard Uecker, Detlef Klimm, Klaus Irmscher, Mike Pietsch,
Robert Schewski, Martin Albrecht, Albert Kwasniewski, Steffen Ganschow, Detlev Schulz,
Christo Guguschev, Rainer Bertram, Matthias Bickermann, and Roberto Fornari
Growth, characterization, and properties of bulk SnO2 single crystals

Page
74–81
Claudia Rödl and André Schleife
Photoemission spectra and effective masses of n- and p-type oxide semiconductors from first principles: ZnO, CdO, SnO2, MnO, and NiO

Page
82–86
Martin Feneberg, Christian Lidig, Karsten Lange, Mark E. White, Min Y. Tsai, James S. Speck,
Oliver Bierwagen, and Rüdiger Goldhahn
Anisotropy of the electron effective mass in rutile SnO2determined by infrared ellipsometry

Page
87–92
Anna Mogilatenko, Holm Kirmse, Oliver Bierwagen, Martin Schmidbauer, Min-Ying Tsai,
Ines Häusler, Mark E. White, and James S. Speck
Effect of heavy Ga doping on defect structure of SnO2 layers

Page
93–100
Jan Morasch, Shunyi Li, Joachim Brötz, Wolfram Jaegermann, and Andreas Klein
Reactively magnetron sputtered Bi2O3 thin films: Analysis of structure,
optoelectronic, interface, and photovoltaic properties


 

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