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Humboldt-Universität zu Berlin - Mathematisch-Naturwissen­schaft­liche Fakultät - Nanooptik

Humboldt-Universität zu Berlin | Mathematisch-Naturwissen­schaft­liche Fakultät | Institut für Physik | Nanooptik | Publications | Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature

Mohamed Benyoucef, Verena Zuerbig, Johann P Reithmaier, Tim Kroh, Andreas W Schell, Thomas Aichele, and Oliver Benson (2012)

Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature

Nanoscale Research Letters, 7:493.

The authors report single-photon emission from InGaAs quantum dots grown by droplet epitaxy on (100) GaAs substrates using a solid-source molecular beam epitaxy system at elevated substrate temperatures above 400°C without post-growth annealing. High-resolution micro-photoluminescence spectroscopy exhibits sharp excitonic emissions with lifetimes ranging from 0.7 to 1.1 ns. The coherence properties of the emitted photons are investigated by measuring the first-order field correlation function.
DOI 10.1186/1556-276X-7-493
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