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Humboldt-Universität zu Berlin - Mathematisch-Naturwissen­schaft­liche Fakultät - SFB 951 - HIOS

A8
Adjusting energy levels of hybrid inorganic/organic heterostructures

Objectives

During the past funding period, we have learned how to adjust the work function of ZnO surfaces in the interval ranging from 2.2 eV to 6.5 eV using molecular interlayers, and we have acquired understanding of the underlying fundamental mechanisms. As a key parameter the doping level of the inorganic semiconductor was identified. We will now expand the parameter space for tuning the HIOS energy level alignment by including doping of the organic semiconductor. We will also expand the inorganic semiconductors to be studied to GaN and Si, where p- and n-type doping is feasible. This opens the possibility to reach novel HIOS interface phenomena.

 

Principal Investigators


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Norbert Koch

030 2093 7819

norbert.kochphysik.hu-berlin.de

 

Postdoctoral Researchers


opitz.jpg

Opitz, Andreas

030 2093 7545

andreas.opitzphysik.hu-berlin.de

salzmann.jpg

Salzmann, Ingo

030 2093 7537

ingo.salzmannphysik.hu-berlin.de

 

Doctoral Students


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Raphael Schlesinger

030 2093 7538

schlephysik.hu-berlin.de

schultz.png

Thorsten Schultz

030 2093 7546

tschultzphysik.hu-berlin.de


Institutions:        FHI-Logo        HZB-Logo          Uni Potsdam-Logo          TU Berlin-Logo         HU Berlin-Logo

            IRIS Logo              Funded by:       DFG Logo