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Humboldt-Universität zu Berlin - Mathematisch-Naturwissen­schaft­liche Fakultät - SFB 951 - HIOS

B8
Inorganic/organic core/shell GaN-based nanowire light-emitting diodes based on Förster resonant energy transfer
Completed Project

Objectives

The central goal of this project is the realization of inorganic/organic core/shell nanowire light-emitting diodes (LEDs) based on the Förster resonant energy transfer (FRET) process. To achieve this goal, the project is structured into three stages. In the first stage, the FRET process will be investigated for planar (In,Ga)N/GaN layers coated with conjugated organic molecules by photoluminescence spectroscopy. In the second stage, these investigations will be extended to (In,Ga)N/GaN nanowires. In the third stage, the effect of the FRET process will be studied for light-emitting p-i-n (In,Ga)N/GaN nanowire diodes using electroluminescence spectroscopy.

 

Principal Investigators


riechert.jpg

Henning Riechert

030 20377 365

riechertpdi-berlin.de

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Holger T. Grahn

030 20377 318

htgrahnpdi-berlin.de


Institutions:

FHI-Logo    HZB-Logo    IRIS Logo      Uni Potsdam-Logo    FU Logo    TU Berlin-Logo      HU Berlin-Logo

 

 

Funded by:  DFG Logo