Humboldt-Universität zu Berlin - Faculty of Mathematics and Natural Sciences - Elementaranregungen und Transport in Festkörpern

Integration of III-V materials on Si and SiGe


Related Publications

  • Thermal annealing effect on the structural properties of epitaxial growth of GaP on Si substrate, Journal of Crystal Growth 419, 42 (2015)
  • Lattice-engineered Si1-xGex-buffer on Si (001) for GaP integration, Journal of Applied Physics 115, 103501 (2014)
  • GaP collector development for SiGe HBT performance increase: A heterostructure growth study, Journal of Applied Physics 111, 073515 (2012)
  • A comparison of the low frequency noise in InSb grown on GaAs and Si by MBE, Journal of Crystal Growth 323, 393-396 (2011)
  • Low frequency noise in InSb/GaAs and InSb/Si channels, Applied Physics Letters 97, 102101 (2010)
  • Comparison of MBE Growth of InSb on Si (001) and GaAs (001), Journal of electronic materials 37, 1799 (2008)