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Abb.: Danny Kojda

Novel Materials

Humboldt-Universität zu Berlin - Mathematisch-Naturwissen­schaft­liche Fakultät - Novel Materials

Publikationen "Novel Oxide Semiconductors"




Plasma-assisted molecular beam epitaxy of Sn-doped In2O3: Sn incorporation, structural changes,
doping limits, and compensation

O. Bierwagen, and J.S. Speck
Phys. Status Solidi A 211, 48 (2014).
DOI: 10.1002/pssa.201330224

MBE of transparent semiconducting oxides
O. Bierwagen, M. E. White, M. Y. Tsai, and J. S. Speck
in: "Molecular Beam Epitaxy", M. Henini (ed.), Elsevier Oxford, chap. 15. (2013).
DOI: 10.1016/B978-0-12-387839-7.00015-4

On the bulk β-Ga2O3 single crystals grown by the Czochralski method
Z. Galazka, K. Irmscher, R. Uecker, R. Bertram, M. Pietsch, A. Kwasniewski, M. Naumann, T. Schulz, R. Schewski, D. Klimm, and M. Bickermann
J. Crystal Growth 404, 184 (2014).
DOI: 10.1016/j.jcrysgro.2014.07.021

Growth, characterization, and properties of bulk SnO2 single crystals
Z. Galazka, R. Uecker, D. Klimm, K. Irmscher, M. Pietsch, R. Schewski, M. Albrecht, A. Kwasniewski, S. Ganschow, D. Schulz, C. Guguschev, R. Bertram, M. Bickermann, and R. Fornari
Phys. Status Solidi A 211, 66 (2014).
DOI: 10.1002/pssa.2013330020

Lattice parameters and Raman-active phonon modes of (InxGa1-x)2O3 for x < 0.4
C. Kranert, J. Lenzner, M. Jenderka, M. Lorenz, H. von Wenckstern, R. Schmidt-Grund, and M. Grundmann
J. Appl. Phys. 116, 013505 (2014).
DOI: 10.1063/1.4886895

Control of the conductivity of Si-doped β-Ga2O3 thin films via growth temperature and pressure
S. Müller, H. von Wenckstern, D. Splith, F. Schmidt, and M. Grundmann
Phys. Status Solidi A 211, 34 (2014).
DOI: 10.1002/pssa.201330025

Vapor Transport Growth of Wide Bandgap Materials
T. Paskova, and M. Bickermann
in "Handbook of Crystal Growth Vol. 2a", P. Rudolph (ed.), Elsevier Science Ltd., chap. 16. (2014).
DOI: 10.1016/B978-0-444-63303-3.00016-X

Homoepitaxial growth of β-Ga2O3 layers by metal-organic vapor phase epitaxy
G. Wagner, M. Baldini, D. Gogova, M. Schmidbauer, R. Schewski, M. Albrecht, Z. Galazka, D. Klimm, and R. Fornari
Phys. Status Solidi A 211, 27 (2014).
DOI: 10.1002/pssa.201330092

β-Ga2O3 growth by plasma-assisted molecular beam epitaxy
M.Y. Tsai, O. Bierwagen, M.E. White, J.S. Speck
J. Vac. Sci. Technol. A 28, 354 (2010).
DOI: 10.1116/1.3294715

Continuous composition spread using pulsed-laser deposition with a single, segmented target
H. von Wenckstern, Z. Zhang, F. Schmidt, J. Lenzner, H. Hochmuth, and M. Grundmann
CrystEngComm 15, 10020-10027 (2013).
DOI: 10.1039/C3CE41327F



"Ab initio Modeling of Group-III Oxide Semiconductors"


Theoretical evidence for an optically inducible structural transition of the isolated As antisite in GaAs: Identification and explanation of EL2
J. Dabrowski and M. Scheffler
Phys. Rev. Lett 60, 2183 (1988).
DOI: 10.1103/PhysRevLett.60.2183

ElaStic: A tool for calculating second-order elastic constants from first principles
R. Golesorkhtabar, P. Pavone, J. Spitaler, P. Puschnig, and C. Draxl
Comp. Phys. Commun. 184, 1861 (2013).
DOI: 10.1016/j.j.cpc.2013.03.010

Influence of the core-valence interaction and of the pseudopotential approximation on the electron self-energy in semiconductors
R. Gómez-Abal, X. Li, M. Scheffler, and C. Ambrosch-Draxl
Phys. Rev. Lett. 101, 106404 (2008).
DOI: 10.1103/PhysRevLett.101.106404

exciting: a full-potential all-electron package implementing density-functional theory and many-body perturbation theory
A. Gulans, S. Kontur, C. Meisenbichler, D. Nabok, P. Pavone, S. Rigamonti, S. Sagmeister, U. Werner, and C. Draxl
J. Phys: Cond. Matter 26, 363202 (2014).
DOI: 10.1088/0953-8984/26/36/363202

The ideal work of separation of the TiO2 (100)/(0001)Al2O3 interface: A first-principles study supported by experiment
M. N. Popov, J. Spitaler, M. Mühlbacher, C. Walter, J. Keckes, C. Mitterer, and C. Draxl
Phys. Rev. B 86, 205309 (2012).

Optical absorption of semi-conductors and insulators including electron-hole correlations: an ab-initio study within the LAPW method
P. Puschnig and C. Ambrosch-Draxl
Phys. Rev. B 66, 165105 (2002).
DOI: 10.1103/PhysRevB.66.165105

Random-phase approximation and its applications in computational chemistry and materials science
X. Ren, P. Rinke, C. Joas, and M. Scheffler
J. Mater. Sci. 47, 7447–7471 (2012).
DOI: 10.1007/S10853-012-6570-4

Ab initio atomistic thermodynamics and statistical mechanics of surface properties and functions
K. Reuter, C. Stampfl, and M. Scheffler
In: "Handbook of Materials Modeling", Vol. 1. (Ed.) Sidney Yip. Springer Berlin Heidelberg 149, (2005).
DOI: 10.1007/978-1-4020-3286-8_10
ISBN 1-4020-3287-0

Effects of strain on the band structure of group-III nitrides
Q. Yan, P. Rinke, A. Janotti, M. Scheffler, and C. G. Van de Walle
Phys. Rev. B 00, 005100 (2014).
DOI: 10.1103/PhysRevB.90.125118

Strain effects and parameters in MgO, ZnO, and CdO
Q. Yan, P. Rinke, M. Winkelnkemper, A. Qteish, D. Bimberg, M. Scheffler, and C. G. Van de Walle
App. Phys. Lett. 101, 152105 (2012).
DOI: 10.1063/1.4759107





Adsorbate-induced modification of the surface electronic structure at GaAs(001) surfaces
T. Bruhn, B. O. Fimland, M. Kneissl, N. Esser and P. Vogt
Phys. Rev. B 83, 045307 (2011).
DOI: 10.1103/PhysRevB.83.045307

Evidence for longitudinal coherence in fast atom diffraction
M. Busch, J. Seifert, E. Meyer and H. Winter
Phys. Rev. B 86, 241402(R) (2012).
DOI: 10.1103/PhysRevB.86.241402

Fast atom diffraction from a β-Ga2O3(100) surface
M. Busch, E. Meyer, K. Irmscher, Z. Galazka, K. Gärtner, and H. Winter
Appl. Phys. Lett. 105, 051603 (2014).
DOI: 10.1063/1.4892350

Diffraction of fast H atoms during grazing scattering from an Al2O3(1120) surface
M. Busch, J. Seifert, E. Meyer, and H. Winter
Nucl. Instrum. Methods Phys. Res. Sect. B 317, 90 (2013).

Confirmation of intrinsic electron gap states at nonpolar GaN (1100) surfaces combining photoelectron and surface optical spectroscopy
M. Himmerlich, A. Eisenhardt, S. Shokhovets, S. Krischok, J. Räthel, E. Speiser, M. D. Neumann, A. Navarro-Quezada, and N. Esser
Appl. Phys. Lett. 104, 171602 (2014).
DOI: 10.1063/1.4873376

Preparation and atomic structure of reconstructed (0001) InGaN surfaces
C. Friedrich, A. Biermann, V. Hoffmann, M. Kneissl, N. Esser and P. Vogt
J. Appl. Phys. 112, 033509 (2012).
DOI: 10.1063/1.4743000

Understanding intensities of angle resolved photoemission with circularly polarized radiation
from a Cu(111) surface state

M. Mulazzi, G. Rossi, J. Braun, J. Minár, H. Ebert, G. Panaccione, I. Vobornik and J. Fujii
Phys. Rev. B 79, 165421 (2009).
DOI: 10.1103/PhysRevB.79.165421

Schottky contact by Ag on In2O3(111) single crystals
M. Nazarzadehmoafi, S. Machulik, F. Neske, C. Janowitz, Z. Galazka, M. Mulazzi, and R. Manzke
Appl. Phys. Lett. 105, 162104 (2014).
DOI: 10.1063/1.4899143

Temperature dependence of the exchange stiffness in FePd(001) thin films: Deviation from the
empirical law A(T) ~ MS2 at intermediate temperatures

M. Mulazzi, A. Chainani, Y. Takata, Y. Nishino, K. Tamasaku, T. Ishikawa, T. Takeuchi, Y. Ichida, Y. Senba, H. Ohashi, and S. Shin
Phys. Rev. B 77 224415 (2008).
DOI: 10.1103/PhysRevB.77.224425

Surfaces of Compound Semiconductors
P. Vogt and N. Esser
Surface and Interface Science Volume 3: "Properties of Composite Surfaces", K. Wandelt (ed.) Wiley VCH, (2013).
DOI: 10.1002/9783527680559.ch13



"Crystal Structure, Interfaces, and Defects"


In-situ observation of small polarons in Gallium oxide by aberration corrected high resolution transmission electron microscopy
M. Albrecht, J. Varley, T. Remmele, Z. Gałaska, R. Uecker, C. Van de Walle, and R. Fornari
Proceedings of the 15th European Microscopy Congress, Manchester, UK 2012. Published by the Royal Microscopy Society, Oxford, UK,
ISBN: 978-0-9502463-5-2 (2012). Available here

Coloration and oxygen vacancies in wide band gap oxide semiconductors: Absorption at metallic nanoparticles induced by vacancy clustering – A case study on indium oxide
M. Albrecht, R. Schewski, K. Irmscher, Z. Galazka, T. Markurt, M. Naumann, T. Schulz, R. Uecker, R. Fornari, S. Meuret and M. Kociak
J. Appl. Phys. 115, 053504 (2014).
DOI: 10.1063/1.4863211

Texture and morphology of ZnO grown on nanocrystalline p-sexiphenyl thin films
S. Blumstengel, H. Kirmse, M. Sparenberg, S. Sadofev, F. Henneberger
J. Cryst. Growth 402, 187 (2014).
DOI: 10.1016/j.jcrysgro.2014.05.009

Delayed crystallization of ultrathin Gd2O3 layers on Si(111) observed by in-situ x-ray diffraction
M. Hanke, V. M. Kaganer, O. Bierwagen, M. Niehle, A. Trampert
Nanoscale Res. Lett. 7, 203 (2012).
DOI: 10.1186/1556-276X-7-203

Elastic strain relaxation in axial Si∕Ge whisker heterostructures
M. Hanke, C. Eisenschmidt, P. Werner, N. D. Zakharov, F. Syrowatka, F. Heyroth, P. Schäfer, and O. Konovalov
Phys. Rev. B 75, 161303(R) (2007).
DOI: 10.1103/PhysRevB.75.161303

Effect of heavy Ga doping on defect structure of SnO2 layers
A. Mogilatenko, H. Kirmse, O. Bierwagen, M. Schmidbauer, M.-Y. Tsai, I. Häusler, M. E. White, J. S. Speck
Phys. Status Solidi. A 211, 87 (2014).
DOI: 10.1002/pssa.201330145

Blocking growth by an Electrically Active Subsurface Layer: The Effect of Si as an Antisurfactant in the Growth of GaN
T. Markurt, L. Lymperakis, J. Neugebauer, P. Drechsel, P. Stauss, T. Schulz, T. Remmele, V. Grillo, E. Rotunno, and M. Albrecht
Appl. Phys. Lett. 110, 036103 (2013).
DOI: 10.1103/PhysRevLett.110.036103

Analysis of statistical compositional alloy fluctuations in InGaN from aberration corrected transmission electron microscopy image series
T. Schulz, T. Remmele, T. Markurt, M. Korytov and M. Albrecht
J. Appl. Phys. 112, 033106 (2012).
DOI: 10.1063/1.4742015

High spatial resolution semi-automatic crystallite orientation and phase mapping of nanocrystals in transmission electron microscopes
P. Moeck, S. Rouvimov, E.F. Rauch, M. Veron, H. Kirmse, I. Hausler, W. Neumann, D. Bultreys, Y. Maniette, and S. Nicolopoulos
Cryst. Res. Technol. 46, 598 (2011).
DOI: 10.1002/crat.201000676

Epitaxial polymorphism of La2O3 on Si(111) studied by in situ x-ray diffraction
A. Proessdorf, M. Niehle, M. Hanke, F. Grosse, V. Kaganer, O. Bierwagen, and A. Trampert
Appl. Phys. Lett. 105, 021601 (2014).
DOI: 10.1063/1.4890107



"Band Structure, Electronic and Optical Properties"


In-gap states of In2O3 single crystals investigated by scanning tunneling spectroscopy
D. Braun, V. Scherer, C. Janowitz, Z. Galazka, R. Fornari, and R. Manzke
Phys. Status Solidi. A 211, 59 (2014).
DOI: 10.1002/pssa.201330089

Observation of the electron-accumulation layer at the surface of InN by cross-sectional micro-Raman spectroscopy
Y. J. Cho, M. Ramsteiner, and O. Brandt
Appl. Phys. Lett. 102, 072101 (2013).
DOI: 10.1063/1.4792837

Shell-doping of GaAs nanowires with Si for n-type conductivity
E. Dimakis, M. Ramsteiner, A. Tahraoui, H. Riechert, and L. Geelhaar
Nano Res. 5, 796 (2012).
DOI: 10.1007/s12274-012-0263-9

Ordinary and extraordinary dielectric functions of rutile SnO2 up to 20 eV
M. Feneberg, C. Lidig, K. Lange, R. Goldhahn, M.D. Neumann, N. Esser, O. Bierwagen, M. E. White, M. Y. Tsai, and J. S. Speck
Appl. Phys. Lett. 104, 231106 (2014).
DOI: 10.1063/1.4882237

Anisotropy of the electron effective mass in rutile SnO2 determined by infrared ellipsometry
M. Feneberg, C. Lidig, K. Lange, M. E. White, M. Y. Tsai, J. S. Speck, O. Bierwagen, R. Goldhahn
Phys. Status Solidi. A 211, 82 (2014).
DOI: 10.1002/pssa.201330147

Anisotropic absorption and emission of bulk (1-100) AlN
M. Feneberg, M.F. Romero, M. Röppischer, C. Cobet, N. Esser, B. Neuschl, K. Thonke, M. Bickermann, R. Goldhahn
Phys. Rev. B 87, 235209 (2013).
DOI: 10.1103/PhysRevB.87.235209

Ellipsometry of InN and related alloys
R. Goldhahn, P. Schley, and M. Röppischer
in: "Indium Nitride and Related Alloys", ed. by T.D. Veal, C.F. McConville, and W.J. Schaff, CRC Press (Boca Raton), 315 (2009).
DOI: 10.1201/9781420078107-c9

Experimental electronic structure of In2O3 and Ga2O3
C. Janowitz, V. Scherer, M. Mohamed, A. Krapf, H. Dwelk, R. Manzke, Z. Galazka, R. Uecker, K. Irmscher, R. Fornari, M. Michling, D. Schmeißer, J. R. Weber, and C. G. van de Walle
New J. Phys. 13, 085014 (2011).
DOI: 10.1088/1367-2630/13/8/085014

Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3
M. Mohamed, K. Irmscher, C. Janowitz, Z. Galazka, R. Manzke, R. Fornari
Appl. Phys. Lett. 101, 132106 (2012).
DOI: 10.1063/1.4755770

Comparative study of the electronic structures of the In and Sn/In2O3(111) interfaces
M. Nazarzahdemoafi, F. Titze, S. Machulik, C. Janowitz, Z. Galazka, R. Manzke, M. Mulazzi
Submitted for publication (2015).

Growth of wurtzite InN on bulk In2O3(111) wafers
S. Sadofev, Y. J. Cho, O. Brandt, M. Ramsteiner, R. Calarco, H. Riechert, S. C. Erwin, Z. Galazka, M. Korytov, M. Albrecht, R. Uecker, and R. Fornari
Appl. Phys. Lett. 101, 172102 (2012).
DOI: 10.1063/1.4761985

Polaron character of the near-EF band of cleaved In2O3 (111) single crystals
V. Scherer, C. Janowitz, Z. Galazka, M. Nazarzahdemoafi, and R. Manzke
EPL, 113, 26003 (2016).
DOI: 10.1209/0295-5075/113/26003



"Transport and Devices"


Temperature-dependent thermal conductivity in Mg-doped and undoped ß-Ga2O3 bulk-crystals
M. Handwerg, R. Mitdank, Z. Galazka, and S. F. Fischer
Semicond. Sci. Technol. 30, 024006, Special Issue Article (2015).
arXiv:1407.4272v2 [cond-mat.mtrl-sci]

Buried-heterostructure quantum-cascade laser overgrown by gas-source molecular-beam epitaxy
M. Chashnikova, G. Monastyrskyi, A. Aleksandrova, M. Klinkmueller, M. P. Semtsiv, and W. T. Masselink
Appl. Phys. Lett. 100, 213504 (2012).
DOI: 10.1063/1.4719109

Low frequency noise in InSb/GaAs and InSb/Si channels
J. Dobbert, L. Tran, F. Hatami, W. T. Masselink, Vas. P. Kunets, and G. J. Salamo
Appl. Phys. Lett. 97, 102101 (2010).
DOI: 10.1063/1.3483233

Effect of heat treatment on properties of melt-grown bulk In2O3 single crystals
Z. Gałazka, Irmscher, M. Pietsch, T. Schulz, R. Uecker, D. Klimm, and R. Fornari
Cryst. Eng. Comm. 15, 2220 (2013).
DOI: 10.1002/pssa.201330020

Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method
K. Irmscher, Z. Galazka, M. Pietsch, R. Uecker, and R. Fornari
J. Appl. Phys. 110, 063720 (2011).
DOI: 10.1063/1.3642962

On the nature and temperature dependence of the fundamental band gap of In2O3
K. Irmscher, M. Naumann, M. Pietsch, Z. Galazka, R. Uecker, T. Schulz, R. Schewski, M. Albrecht, and R. Fornari
Phys. Status Solidi A 211, 54-58 (2013).
DOI: 10.1002/pssa.201330184

Temperature-dependent electrical characterization of exfoliated β-Ga2O3 micro flakes
R. Mitdank, S. Dusari, C. Bülow, M. Albrecht, Z. Galazka, S. F. Fischer
Phys. Status Solidi A 211,543-549 (2014).
DOI: 10.1002/pssa.201330671

Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3
M. Mohamed, K. Irmscher, C. Janowitz, Z. Galazka, R. Manzke, and R. Fornari
Appl. Phys. Lett. 101, 132106 (2012).
DOI: 10.1063/1.4755770

X(t)-X(l) valley crossover and deformation potential in AlP/GaP quantum wells
M. P. Semtsiv, O. Bierwagen, W. T. Masselink, M. Goiran, J. Galibert, and J. Leotin
Phys. Rev. B 77, (2008).
DOI: 10.1103/PhysRevB.77.165327

Porous Nanostructures and Thermoelectric Power Measurement of Electro-Less Etched Black Silicon
G. Yuan, R. Mitdank, A. Mogilatenko, and S. F. Fischer
J. Phys. Chem. C 116, 13767 (2012).
DOI: 10.1021/jp212427g